Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
Lay - The main direction of surface texture on a wafer.
层 - 晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
Lithography - The process used to transfer patterns onto wafers.
光刻 - 从掩膜到圆片转移的过程。
Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
Lot - Wafers of similar sizes and characteristics placed together in a shipment.
批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
Mechanical Test Wafer - A silicon wafer used for testing purposes. 机械测试晶圆片 - 用于测试的晶圆片。
Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm. 微粗糙 - 小于100微米的表面粗糙部分。
Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal. Miller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable. 最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area. 少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm. 堆垛 - 晶圆片表面超过0.25毫米的缺陷。
Notch - An indent on the edge of a wafer used for orientation purposes. 凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel - A roughened surface that is visible to the unaided eye. 桔皮 - 可以用肉眼看到的粗糙表面
Orthogonal Misorientation - 直角定向误差 -
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